Bias-crafted magnetic tunnel junctions with bistable spin-dependent states - Unité mixte de physique CNRS/Thales
Journal Articles Applied Physics Letters Year : 2006

Bias-crafted magnetic tunnel junctions with bistable spin-dependent states

Abstract

The authors have observed stable, reversible two-resistance states with substantial tunneling magnetoresistances of opposite signs in La0.7Sr0.3MnO3∕SrTiO3∕Co1−xCrx junctions. Electron energy loss spectroscopy studies reveal the segregation and oxidation of electrochemically reactive chromium at that interface, resulting in oxygen vacancies in the oxide barrier. Bias-induced switching between the two junction states is argued to reflect the incidence of these barrier defects at and near the electrically unstable SrTiO3∕Co1−xCrx interface. This affirms bias crafting as an additional lever in spintronic research across semiconducting spacers.
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Dates and versions

hal-00205009 , version 1 (03-09-2024)

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Martin Bowen, Jean-Luc Maurice, Agnès Barthélémy, P. Prod’homme, E. Jacquet, et al.. Bias-crafted magnetic tunnel junctions with bistable spin-dependent states. Applied Physics Letters, 2006, 89 (10), pp.103517/1-3. ⟨10.1063/1.2345592⟩. ⟨hal-00205009⟩
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