Using wafer scale ferroelectric domains of LiNbO3 to form permanent planar p – n junction in narrow band gap nanocrystals - Physico-chimie et dynamique des surfaces Access content directly
Journal Articles Applied Physics Letters Year : 2023

Using wafer scale ferroelectric domains of LiNbO3 to form permanent planar p – n junction in narrow band gap nanocrystals

Thomas Maroutian
Erwan Bossavit
Nicolas Ledos
Adrien Khalili
Huichen Zhang
Yoann Prado
Do Lam Nguyen
Tung Huu Dang
Johan Biscaras
Jose Avila
Jean Francois Dayen
Debora Pierucci

Abstract

p–n junctions based on nanocrystals now serve as fundamental components in optoelectronics. However, the process of designing these p–n junctions has largely relied on empirical choices, either for ligand exchange or for the selection of charge transport layers. Therefore, a systematic strategy is still lacking. In this study, we explore the utilization of ferroelectric domains as a general method for remotely inducing the formation of a p–n junction. To ensure compatibility with devices of various designs, we employ a commercially available periodically poled LiNbO3 (PPLN) substrate commonly used in nonlinear optics. We engineer a PPLN/graphene/HgTe heterostructure and demonstrate its planar photodiode behavior. Through x-ray photoemission microscopy, we confirm that the rectifying behavior stems from the influence of the ferroelectric domains, by ruling out the possibility of the formation of non-ohmic contacts at the electrode/semiconductor interfaces. This approach proves to be quite general and holds promise for the future design of high-speed nanocrystal-based photodiodes.
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Saturday, June 22, 2024
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Dates and versions

hal-04361600 , version 1 (22-12-2023)

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Mariarosa Cavallo, Ankita Ram, Satakshi Pandey, Thomas Maroutian, Erwan Bossavit, et al.. Using wafer scale ferroelectric domains of LiNbO3 to form permanent planar p – n junction in narrow band gap nanocrystals. Applied Physics Letters, 2023, 123 (25), ⟨10.1063/5.0183277⟩. ⟨hal-04361600⟩
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